Pre - exposure bake ' s time has been extended in light etching course for favorable patterns 在光刻工藝過(guò)程中,適當(dāng)延長(zhǎng)前烘時(shí)間可得到良好的顯影圖案。
P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology 本文采用p型單晶硅片,由熱氧化形成sio _ 2掩膜層,標(biāo)準(zhǔn)光刻工藝進(jìn)行圖形轉(zhuǎn)移,用koh溶液濕法刻蝕制作倒四棱錐腐蝕坑列陣。
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology . then the electrochemical etching experiments are done in three poles electrobath . and some technology questions such as heat oxygenation , light etching , wet etching and electrochemical etching have been analyzed . at the same time sample appearances are analyzed by scanning electron microscope . according to current burst model theory , the electrochemical deep holes etching mechanism are analyzed 在三極電解槽中,進(jìn)行了電化學(xué)深刻蝕的探索性實(shí)驗(yàn)。對(duì)氧化、光刻、濕法刻蝕和電化學(xué)刻蝕中的工藝問(wèn)題進(jìn)行了初步的理論和實(shí)驗(yàn)研究,同時(shí),采用sem對(duì)實(shí)驗(yàn)樣品進(jìn)行了形貌分析,并采用電流突破模型對(duì)電化學(xué)深孔刻蝕機(jī)理進(jìn)行了理論分析。